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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 DESCRIPTION *With TO-220Fa package *High DC current gain *Low saturation voltage *Complement to type 2SB1020 *DARLINGTON APPLICATIONS *High power switching applications *Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 7 0.2 30 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=3A ;IB=6mA IC=7A ;IB=14mA 0.9 1.5 V Collector-emitter saturation voltage 1.2 2.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.5 V A ICBO Collector cut-off current VCB=100V; IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 2000 15000 hFE-2 DC current gain IC=7A ; VCE=3V 1000 Switching times s s s ton Turn-on time IB1=-IB2=6mA VCC=45V ,RL=15 0.8 tstg Storage time 3.0 tf Fall time 2.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1415 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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